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| FDMA420NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET FDMA420NZ Single N-Channel 2.5V Specified 20V, 5.7A, 30m General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. April 2008 PowerTrench(R) MOSFET Features RDS(on) = 30m @ VGS = 4.5 V, ID = 5.7A RDS(on) = 40m @ VGS = 2.5 V, ID = 5.0A tm Applications Li-lon Battery Pack Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm HBM ESD protection level > 2.5k V typical (Note 3) RoHS Compliant Pin 1 D D G Source S D D 4 3 Drain G D D 5 2 6 1 D D S Bottom Drain Contact MicroFET Bottom View 2X2 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed (Note 1a) (Note 1a) (Note 1b) Ratings 20 12 5.7 24 0.9 2.4 -55 to +150 Units V V A W o Power dissipation (Steady State) Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 145 52 o C/W Package Marking and Ordering Information Device Marking 420 Device FDMA420NZ Reel Size 7" 1 Tape Width 12mm Quantity 3000 units www.fairchildsemi.com (c)2008 Fairchild Semiconductor Corporation FDMA420NZ Rev B2 FDMA420NZ Single N-Channel 2.5V specified PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0V , ID = 250A ID = 250A, Referenced to 25C VDS = 16V, VGS = 0V, VGS = 12V, VDS = 0V 20 12 1 10 V mV/C A A On Characteristics (Note 2) VGS(th) VGS(th) TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250A ID = 250A, Referenced to 25C VGS = 4.5V, ID = 5.7A VGS = 4.0V, ID = 5.7A RDS(ON) Static Drain-Source On-Resistance VGS = 3.1V, ID = 5.0A VGS = 2.5V, ID = 5.0A VGS = 4.5V, TJ =150C gFS Forward Transconductance VDS = 5V, ID = 5.7A, ID = 5.7A 0.6 0.83 -3.1 16.8 17.3 18.9 21.2 24.8 28.3 30 31 33 40 44 S m 1.5 V mV/C Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS = 0V, f = 1.0MHz f = 1.0MHz 701 163 125 1.92 935 220 190 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10V, ID = 5.7A, VGS = 4.5V VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6 9.8 8.6 21.5 8.6 8.8 0.9 2.4 20 18 43 18 12 2 4 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. a. 145C/W when mounted on a minimum pad of 2 oz copper. b. 52C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. 3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS = 2.0A IF = 5.7A, di/dt = 100A/s 0.69 2.0 1.2 20 5 A V ns nC 2 FDMA420NZ Rev B2 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = 4.5V VGS = 3.5V VGS = 3.0V VGS = 2.0V VGS = 1.5V VGS = 2.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 45 ID, DRAIN CURRENT (A) 2.1 PULSE DURATION = 300S DUTY CYCLE = 2.0%MAX 40 35 30 25 20 15 10 5 0 0 1 1.8 VGS = 2.0V VGS = 3.0V VGS = 2.5V 1.5 VGS = 3.5V 1.2 VGS = 4.5V 2 3 4 0.9 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics Figure 2. On-Resistance vs Drain Current and Gate Voltage 60 RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 5.7A VGS = 4.5V 50 40 30 20 10 PULSE DURATION = 300S DUTY CYCLE = 2.0%MAX ID = 2.8A TJ = 125oC TJ = 25oC -40 0 40 80 120 160 1 TJ, JUNCTION TEMPERATURE (oC) 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 3. Normalized On Resistance vs Junction Temperature 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 0.5 PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX Figure 4. On-Resistance vs Gate to Source Votlage 100 IS, REVERSE DRAIN CURRENT (A) 10 1 0.1 0.01 1E-3 1E-4 0.2 VGS = 0V VDS = 5V TJ = 125oC TJ = 25oC TJ = -55oC TJ = 125oC TJ = 25oC TJ = -55oC 1.0 1.5 2.0 2.5 0.4 0.6 0.8 1.0 1.2 1.4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMA420NZ Rev B2 FDMA420NZ Single N-Channel 2.5V specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 5 4 3 2 1 0 VDS = 15V VDS = 20V VDS = 25V 2000 1000 CAPACITANCE (pF) Ciss Coss 100 50 0.1 f = 1MHz VGS = 0V Crss 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 12 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 6 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10us 5 4 3 2 1 0 25 VGS = 4.5V 10 100us 1ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) SINGLE PULSE TJ=MAX RATED TA=25oC 1 10ms 100ms 1s 10s DC VGS = 2.5V 0.1 0.01 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 150 Figure 9. Forward Bias Safe Operating Area 200 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I= I 150 - T 25 125 A -------------------- 100 VGS = 10V 10 SINGLE PULSE 1 0.5 -4 10 10 -3 10 -2 10 t, PULSE WIDTH (s) -1 10 0 10 1 10 2 10 3 Figure 11. Single Pulse Maximum Power Dissipation 4 FDMA420NZ Rev B2 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 1 Normalized Thermal Impedance, ZJA PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA RJA = 145oC SINGLE PULSE 0.01 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION(s) Figure 12. Transient Thermal Response Curve 5 FDMA420NZ Rev B2 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench(R) MOSFET Dimensional Outline and Pad Layout 6 FDMA420NZ Rev B2 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDMA420NZ Rev B2 7 www.fairchildsemi.com |
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